Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors
- Sprache
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Englisch
- Identifier
-
1266293108
- Beteiligte Personen und Organisationen
-
Challa, S. R.
Witte, Hartmut
Schmidt, Gordon
Bläsing, Jürgen
Vega, N.
Kristukat, C.
Müller, N. A.
Debray, M. E.
Christen, J.
Dadgar, A.
Strittmatter, André
- DOI
-
10.25673/89846
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
16.09.2022, 08:56 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Challa, S. R.
- Witte, Hartmut
- Schmidt, Gordon
- Bläsing, Jürgen
- Vega, N.
- Kristukat, C.
- Müller, N. A.
- Debray, M. E.
- Christen, J.
- Dadgar, A.
- Strittmatter, André
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