Monografie
Fabrication and characterization of gallium nitride based high electron mobility transistors for mm-wave applications = Herstellung und Charakterisierung von Gallium-Nitrid-basierten High-Electron-Mobility-Transistoren für mm-Wellen-Anwendungen
- Sprache
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Englisch
- Anmerkungen
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Aachen, Techn. Hochsch., Diss., 2012
- Identifier
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1021514772
- Thema
-
Gallium , Nitride , HEMT; Hochschulschrift
- Beteiligte Personen und Organisationen
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:52 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Monografie
Beteiligte
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