Monografie
Optimization and characterization of GaN-based high electron mobility transistors
- Sprache
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Englisch
- Umfang
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VIII, 153 S.
- Anmerkungen
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Zugl.: Zürich, Eidgenöss. Techn. Hochsch., Diss., 2011
- ISBN
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978-3-8440-0683-4
- Identifier
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1019355328
- Reihe
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Berichte aus der Elektrotechnik
- Thema
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Passivierung ; Trockenätzen ; Ionenimplantation ; HEMT ; Galliumnitrid ; Aluminiumnitrid ; Halbleitersubstrat ; Silicium ; Millimeterwelle ; Hochschulschrift
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Der Zugriff auf Teile des Objekts ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.04.2024, 08:51 MESZ
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Objekttyp
- Monografie
Beteiligte
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