Monografie
Study of gallium nitride high electron mobility transistors towards highly efficient and reliable power switching
- Ausgabe
-
[1. Auflage]
- Sprache
-
Englisch
- Umfang
-
xvi, 132 Seiten
- ISBN
-
978-3-8440-7716-2
- Identifier
-
1220791199
- Reihe
-
Berichte aus der Halbleitertechnik
- Thema
-
HEMT ; Galliumnitrid ; Zwischenschicht ; Leistungsschalter ; Zuverlässigkeit ; Effizienzsteigerung ; Hochschulschrift
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Der Zugriff auf Teile des Objekts ist unbeschränkt möglich.
- Letzte Aktualisierung
-
16.08.2023, 18:36 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Monografie
Beteiligte
Ähnliche Objekte (12)
Normally-off transistor topologies in gallium nitride technology
Gallium nitride electronics
Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology.
Technology of gallium nitride crystal growth
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Indium gallium nitride nanostructures for optoelectronic applications
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
Polarity control and doping in aluminum gallium nitride
Electrical transport properties of doped gallium nitride nanowires
Normally-off transistor topologies in gallium nitride technology
Gallium nitride electronics
Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology.
Technology of gallium nitride crystal growth
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Indium gallium nitride nanostructures for optoelectronic applications
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
Polarity control and doping in aluminum gallium nitride
Electrical transport properties of doped gallium nitride nanowires
Normally-off transistor topologies in gallium nitride technology
Gallium nitride electronics
Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology.
Technology of gallium nitride crystal growth
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Indium gallium nitride nanostructures for optoelectronic applications
Vertical Gallium Nitride Power Devices : Fabrication and Characterisation
Polarity control and doping in aluminum gallium nitride