Monografie
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
- Sprache
-
Englisch
- Umfang
-
VII, 119 S.
- Anmerkungen
-
Paderborn, Univ., Diss., 2003 (Nicht für den Austausch)
- Identifier
-
968910823
- Thema
-
Siliciumcarbid ; Störstelle ; Ausheilung ; Dichtefunktionalformalismus ; Starke Kopplung ; Hochschulschrift
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Der Zugriff auf Teile des Objekts ist unbeschränkt möglich.
- Letzte Aktualisierung
-
16.08.2023, 18:40 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Monografie
Beteiligte
Ähnliche Objekte (12)
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Engineering and control of defects in silicon carbide for quantum technologies
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells
Microcrystalline silicon carbide for silicon heterojunction solar cells
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Engineering and control of defects in silicon carbide for quantum technologies
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells
Microcrystalline silicon carbide for silicon heterojunction solar cells
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications
Electrical Characterization of Point Defects in 4H Silicon Carbide Power Devices
Engineering and control of defects in silicon carbide for quantum technologies
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells