Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
- Sprache
-
Englisch
- Identifier
-
1207546380
- Beteiligte Personen und Organisationen
-
Schöler, Michael
Brecht, Clemens
Wellmann, Peter J.
- DOI
-
10.3390/ma12152487
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:57 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Schöler, Michael
- Brecht, Clemens
- Wellmann, Peter J.
Ähnliche Objekte (12)
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Cubic Silicon Carbide For Direct Photoelectrochemical Water Splitting
Extended defects in PVT-grown AlN
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
Annealing-induced periodic patterns in solution grown polymer single crystals
Annealing-induced periodic patterns in solution grown polymer single crystals
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Cubic Silicon Carbide For Direct Photoelectrochemical Water Splitting
Extended defects in PVT-grown AlN
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
Annealing-induced periodic patterns in solution grown polymer single crystals
Annealing-induced periodic patterns in solution grown polymer single crystals
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide
Engineering of Highly Coherent Silicon Vacancy Defects in Silicon Carbide
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
Annealing mechanisms of point defects in silicon carbide : a theoretical investigation
The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy
Sublimation Epitaxy of bulk-like Cubic Silicon Carbide
Cubic Silicon Carbide For Direct Photoelectrochemical Water Splitting
Extended defects in PVT-grown AlN
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
Annealing-induced periodic patterns in solution grown polymer single crystals
Annealing-induced periodic patterns in solution grown polymer single crystals
Optical spectroscopy on silicon vacancy defects in silicon carbide
Optical spectroscopy on silicon vacancy defects in silicon carbide