Monografie
Plasma enhanced growth of GaN single crystalline layers from vapour phase
- Sprache
-
Englisch
- Identifier
-
1114282960
- Thema
-
Galliumnitrid; Gasphase; Plasma; Hochschulschrift
- Beteiligte Personen und Organisationen
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:57 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Monografie
Beteiligte
- Zwierz, Radoslaw
- Kersten, Holger
- Reif, Jürgen
- Siche, Dietmar
Ähnliche Objekte (12)
Plasma enhanced growth of GaN single crystalline layers from vapour phase
Novel multi-component thin films prepared by microwave plasma enhanced chemical vapour deposition
Optimierung eines Plasma-enhanced chemical vapour deposition-Systems zur Entwicklung von Targets für Laser-Ionen-Experimente
Crystalline bacterial cell surface layers
Plasma-enhanced atomic layer deposition of binary metal oxides as gas barrier layers on polymers
Plasma‐Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
Electrical, optical and structural investigation of plasma-enhanced chemical-vapour-deposited amorphous silicon oxynitride films for solar cell applications
Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
LISPmob: enhanced network layer mobility solution
Boundary-Layer Processes Producing Mesoscale Water-Vapour Variability over a Mountainous Island
Impurity distributions in crystalline solid layer in melt crystallization
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
Plasma enhanced growth of GaN single crystalline layers from vapour phase
Novel multi-component thin films prepared by microwave plasma enhanced chemical vapour deposition
Optimierung eines Plasma-enhanced chemical vapour deposition-Systems zur Entwicklung von Targets für Laser-Ionen-Experimente
Crystalline bacterial cell surface layers
Plasma-enhanced atomic layer deposition of binary metal oxides as gas barrier layers on polymers
Plasma‐Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
Electrical, optical and structural investigation of plasma-enhanced chemical-vapour-deposited amorphous silicon oxynitride films for solar cell applications
Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
LISPmob: enhanced network layer mobility solution
Boundary-Layer Processes Producing Mesoscale Water-Vapour Variability over a Mountainous Island
Impurity distributions in crystalline solid layer in melt crystallization
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
Plasma enhanced growth of GaN single crystalline layers from vapour phase
Novel multi-component thin films prepared by microwave plasma enhanced chemical vapour deposition
Optimierung eines Plasma-enhanced chemical vapour deposition-Systems zur Entwicklung von Targets für Laser-Ionen-Experimente
Crystalline bacterial cell surface layers
Plasma-enhanced atomic layer deposition of binary metal oxides as gas barrier layers on polymers
Plasma‐Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
Electrical, optical and structural investigation of plasma-enhanced chemical-vapour-deposited amorphous silicon oxynitride films for solar cell applications
Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
LISPmob: enhanced network layer mobility solution
Boundary-Layer Processes Producing Mesoscale Water-Vapour Variability over a Mountainous Island
Impurity distributions in crystalline solid layer in melt crystallization