An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
- Sprache
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Englisch
- Identifier
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1186381795
- Beteiligte Personen und Organisationen
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Hauck, Martin
Lehmeyer, Johannes
Pobegen, Gregor
Weber, Heiko B.
Krieger, Michael
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
26.01.2023, 13:53 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Hauck, Martin
- Lehmeyer, Johannes
- Pobegen, Gregor
- Weber, Heiko B.
- Krieger, Michael
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