Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
- Sprache
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Englisch
- Identifier
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1081367598
- Thema
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Halbleiter ; Stimulierter Raman-Effekt ; Valenzband
- Beteiligte Personen und Organisationen
- URN
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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26.01.2023, 13:52 MEZ
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Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Wolfstädter, Bernd
- Trebin, Hans-Rainer
- Pascher, Harald
- Häfele, Hans-Georg
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Valence.
Bloch k-selective resonant inelastic scattering of hard X-rays from valence electrons of 3d-metals
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